Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106082
Reference9 articles.
1. Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAs
2. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
3. Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregation
4. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
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