Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3298354
Reference14 articles.
1. Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth
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4. Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation
5. Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)
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