Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)-Reference-Cited by-同舟云学术

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Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

Published:2009-06 Issue:13 Volume:311 Page:3522-3527
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gouyé A.,Kermarrec O.,Halimaoui A.,Campidelli Y.,Rouchon D.,Burdin M.,Holliger P.,Bensahel D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor

2. Performance enhancement in Si/Si0.5Ge0.5/Si strained alloy p-channel metal oxide semiconductor field effect transistors

3. Near-band-gap photoluminescence of Si-Ge alloys

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1. Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃;Journal of Crystal Growth;2024-04

2. Characteristics of High-Order Silane Based Si and Sige Epitaxial Growth Under 600°C;2023

3. Mixed-Substituted Single-Source Precursors for Si_1–xGe_x Thin Film Deposition;Inorganic Chemistry;2022-10-19

4. Strain mapping of silicon carbon suspended membranes;Materials & Design;2021-12

5. Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD;Coatings;2021-05-13

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