Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332609
Reference9 articles.
1. Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide
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3. Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinity
4. Ion energy‐dependent electrical properties of sulfur implants in GaAs
5. The pearson IV distribution and its application to ion implanted depth profiles
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1. Effective combinations of features in predicting the range of incident ions using machine learning;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08
2. High-energy (MeV) ion implantation and its device applications in GaAs and InP;IEEE Transactions on Electron Devices;1993-06
3. MeV energy sulfur implantation in GaAs and InP;Journal of Electronic Materials;1993-05
4. Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices;Journal of Electronic Materials;1993-01
5. Asymptotic analysis of a non-linear model for substitutional diffusion in semiconductors;ZAMP Zeitschrift f�r angewandte Mathematik und Physik;1992-05
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