Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices-Reference-Cited by-同舟云学术

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Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices

Published:1993-01 Issue:1 Volume:22 Page:73-80
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Vellanki Jayadev,Nadella Ravi K.,Rao Mulpuri V.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02665726.pdf

Reference25 articles.

1. B. Fank,Microwave J. 27, 95 (1984).

2. D.E. Davies, J.P. Lorenzo and T.G. Ryan,Solid-State Electron. 21, 981 (1978).

3. R. G. Wilson, D.M. Jamba, V.R. Deline, C.A. Evans, Jr. and Y.S. Park,J. Appl. Phys. 54, 3849 (1983).

4. S.S. Chan, B.G. Streetman and J.E. Baker,J. Electrochem. Soc. 132, 2467 (1985).

5. P.E. Thompson and H.B. Dietrich,J. Electrochem. Soc. 135, 1240(1988).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials Processing;Ion Beams in Materials Processing and Analysis;2012

2. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30

3. High-energy (MeV) ion implantation and its device applications in GaAs and InP;IEEE Transactions on Electron Devices;1993-06

4. MeV energy sulfur implantation in GaAs and InP;Journal of Electronic Materials;1993-05

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