Redistribution and Electrical Properties of S Implanted in GaAs-Reference-Cited by-同舟云学术

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Redistribution and Electrical Properties of S Implanted in GaAs

Published:1985-10-01 Issue:10 Volume:132 Page:2467-2472
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Chan S. S.¹²³,Streetman B. G.¹²³,Baker J. E.¹²³

Affiliation:

1. Avantek, Incorporated, Santa Clara, California 95051

2. Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712

3. Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2113601/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-energy (MeV) ion implantation and its device applications in GaAs and InP;IEEE Transactions on Electron Devices;1993-06

2. MeV energy sulfur implantation in GaAs and InP;Journal of Electronic Materials;1993-05

3. Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices;Journal of Electronic Materials;1993-01

4. Making GaAs integrated circuits;Proceedings of the IEEE;1988-07

5. MeV S Implantation into GaAs;Journal of The Electrochemical Society;1988-05-01

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