Effective dopant activation via low temperature microwave annealing of ion implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829153
Reference19 articles.
1. Laser annealing of arsenic implanted silicon
2. A melting model for pulsing‐laser annealing of implanted semiconductors
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4. Crystallization of amorphous silicon during thin‐film gold reaction
5. A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
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