Preparation of doped hydrogenated amorphous silicon films by microwave electron‐cyclotron‐resonance plasma discharge deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338013
Reference7 articles.
1. Amorphous Silicon Photoconductive Sensor
2. Amorphous silicon solar cell
3. Application of amorphous silicon field effect transistors in addressable liquid crystal display panels
4. Electronic properties of substitutionally doped amorphous Si and Ge
5. Boron Doping of Hydrogenated Silicon Thin Films
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved hydrogenated amorphous silicon thin films by photon assisted microwave electron cyclotron resonance chemical vapor deposition;Applied Physics Letters;1999-01-04
2. The Optimization of the Deposition Variables for High Photoconductivity a-Si:H Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;1998-12-30
3. Characteristics of a-si:h films prepared by ecr cvd as a function of the h2/sih4;Materials Chemistry and Physics;1997-11
4. Properties of polysilicon films deposited on amorphous substrates using reactive plasma beam deposition technique;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-01
5. Monte Carlo simulation of electron behavior in an electron cyclotron resonance discharge;Journal of Applied Physics;1993-05
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