Monte Carlo simulation of electron behavior in an electron cyclotron resonance discharge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352824
Reference27 articles.
1. Reactive ion stream etching utilizing electron cyclotron resonance plasma
2. Damage and contamination‐free GaAs and AlGaAs etching using a novel ultrahigh‐vacuum reactive ion beam etching system with etched surface monitoring and cleaning method
3. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
4. Preparation of doped hydrogenated amorphous silicon films by microwave electron‐cyclotron‐resonance plasma discharge deposition
5. Low‐temperature GaAs epitaxial growth using electron‐cyclotron resonance/metalorganic‐molecular‐beam epitaxy
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1. Simulation of electron distribution features in the ionization process of an electron cyclotron resonance discharge;Physics of Plasmas;2007-11
2. Kinetic phenomena in electron transport in radio-frequency fields;Applied Surface Science;2002-05
3. Modeling electromagnetic fields for the excitation of microwave discharges used for materials processing;Le Journal de Physique IV;1998-10
4. Comparison of the results of Monte Carlo simulations with experimental data for electron swarms in from moderate to very high electric field to gas density ratios;Journal of Physics D: Applied Physics;1998-04-07
5. A study of ion velocity distribution functions in processing plasmas produced by electron cyclotron resonance discharges;Journal of Applied Physics;1997-08
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