Simulation of electron distribution features in the ionization process of an electron cyclotron resonance discharge
Author:
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2805743
Reference18 articles.
1. Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis andin situdoping
2. Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors
3. Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching
4. Factors driving c-axis orientation and disorientation of LiNbO3 thin films deposited on TiN and indium tin oxide by electron cyclotron resonance plasma sputtering
5. Production of multicharged ions and behavior of microwave modes in an electron cyclotron resonance ion source directly excited in a circular cavity resonator
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