Study of defects in silicon dioxide films on Si(100) by a variable‐energy positron beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354246
Reference19 articles.
1. Interaction of positron beams with surfaces, thin films, and interfaces
2. A slow positron beam study of vacancy formation in fluorine‐implanted silicon
3. A slow positron beam study of vacancy formation in fluorine‐implanted silicon
4. Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption
5. Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam
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1. Structure and sublimation of water ice films grown in vacuo at 120–190 K studied by positron and positronium annihilation;Journal of Physics: Condensed Matter;2014-03-06
2. Analytical Methods Using a Positron Microprobe;Analytical Sciences;2009
3. Application of positron beams to the study of positronium-forming solids;Applied Surface Science;2008-10
4. Evolution of Structural Defects in SiO x Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment;Chinese Physics Letters;2008-03
5. Porogen Approach for the Fabrication of Plasma-Polymerized Nanoporous Polysiloxane Films;The Journal of Physical Chemistry B;2006-09-15
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