Lattice location of chromium in semi‐insulating GaAs by ion channeling techniques
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94015
Reference9 articles.
1. EPR ofCr(3d3)in GaAs—evidence for strong Jahn-Teller effects
2. EPR ofCr(3d3)in GaAs—evidence for strong Jahn-Teller effects
3. EPR measurements on chromium doped GaAs, GaP and InP
4. A model relating electrical properties and impurity concentrations in semi‐insulating GaAs
5. Monte Carlo Channeling Calculations
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2. Mossbauer study of Fe in GaAs following Mn-57(+) implantation;2009
3. Mössbauer study of Fe in GaAs following 57Mn + implantation;ISIAME 2008;2009
4. Channeling study of local distortion in indium‐doped semi‐insulating GaAs;Journal of Applied Physics;1990-04-15
5. Arsenic‐rich melt effect on threshold voltage scattering for Si‐implanted GaAs metal‐semiconductor field‐effect transistor;Journal of Applied Physics;1989-01-15
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