EPR measurements on chromium doped GaAs, GaP and InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR
2. EPR ofCr(3d3)in GaAs—evidence for strong Jahn-Teller effects
3. EPR ofCr2+(3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion
4. EPR investigations of the defect chemistry of semi-insulating GaAs : Cr
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1. Electrical and Optical Properties of Chromium Doped GaP;physica status solidi (a);2001-02
2. Chapter 5 Transition Metals in III/V Compounds;Imperfections in III/V Materials;1993
3. Chromium-doped p-type semi-insulating InP;Semiconductor Science and Technology;1988-05-01
4. Electronic structure due to hydrogen and vanadium as substitutional impurities in InP;Physical Review B;1988-02-15
5. Electron Paramagnetic Resonance of V3+ in Semi-Insulating GaP:V;physica status solidi (b);1986-08-01
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