Mössbauer study of Fe in GaAs following 57Mn + implantation
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-01370-6_59.pdf
Reference13 articles.
1. Haga, T., Abe, Y.: Lattice location of chromium in semi-insulating GaAs by ion channeling techniques. Appl. Phys. Lett. 42, 599–601 (1983)
2. Chen, C., Niu, H., Cheng, C.Y., Hsieh, H.H., Yu, Y.C., Wu, S.C.: Lattice location of Mn implanted in gallium arsenide. Nucl. Instrum. Methods B261, 570–573 (2007)
3. Wahl, U., Vantomme, A., Langouche, G.: Lattice sites and damage annealing of Er in low-dose implanted GaAs. Nucl. Instrum. Methods B148, 492–495 (1999)
4. Chan, Y., Yu, K.M., Ben-Tzur, M., Haller, E.E., Jaklevic, J.M., Walukiewicz, W.: Lattice location of diffused Zn atoms in GaAs and InP single crystals. J. Appl. Phys. 69, 2998–3005 (1991)
5. Holm, N., Weyer, G.: Mössbauer study of Sn impurity defect structures in GaAs. J. Phys. C: Solid State Phys. 13, 1109–1120 (1980)
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