Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1483126
Reference9 articles.
1. Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors
2. Evaluation of base transit time in ultra-thin carbon-doped base InP/InGaAs heterojunction bipolar transistors
3. Radiative and nonradiative lifetimes in n-type and p-type 1.6 μm InGaAs
4. Recombination lifetime of In0.53Ga0.47As as a function of doping density
5. Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
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