Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light-Reference-Cited by-同舟云学术

Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light

Published:2016-09-07 Issue:9 Volume:120 Page:095301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Seki Hirofumi^ORCID,Hashimoto Hideki,Ozaki Yukihiro

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962005

Reference30 articles.

1. R. D. Goldblatt , B. Agarwala , M. B. Anand , E. P. Barth , G. A. Biery , Z. G. Chen , and S. Gohen , in Proceedings of International Interconnect Technology Conference (2000), Vol. 1, pp. 261–263.

2. Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-kto extreme low-kinterconnect materials

3. Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization

4. Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy

5. Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

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