Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1629397
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Structure, microstructure and electronic characterisation of the Al2O3/SiO2 interface by electron spectroscopies
3. Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O
4. Robustness of ultrathin aluminum oxide dielectrics on Si(001)
5. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
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