Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O-Reference-Cited by-同舟云学术

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Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Published:2002-05 Issue:1 Volume:303 Page:17-23
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Gosset L.G.,Damlencourt J.-F.,Renault O.,Rouchon D.,Holliger Ph.,Ermolieff A.,Trimaille I.,Ganem J.-J.,Martin F.,Séméria M.-N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB… binary reaction sequence chemistry

3. Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O

4. Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence

5. Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition

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