Application of phase-retrieval x-ray diffractometry to carbon doped SiGe(C)/Si(C) superlattice structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1586970
Reference24 articles.
1. Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001)
2. Silicon-Based Heterostructures: Strained-Layer Growth by Molecular Beam Epitaxy
3. SiGeC: Band gaps, band offsets, optical properties, and potential applications
4. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
5. The influence of substitutional carbon on the Si/Ge interdiffusion studied by x-ray diffractometry at superlattice structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Application of phase-retrieval x-ray diffractometry to carbon doped SiGe(C)∕Si(C) superlattice structures. II. High resolution reconstruction using neural network root finder technique;Journal of Applied Physics;2006-06
2. Strain determination in multilayers by complementary anomalous x-ray diffraction;Physical Review B;2004-05-20
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