The influence of substitutional carbon on the Si/Ge interdiffusion studied by x-ray diffractometry at superlattice structures
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/32/i=10A/a=316/pdf
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2. High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects;Journal of Applied Physics;2006-06
3. Application of phase-retrieval x-ray diffractometry to carbon doped SiGe(C)∕Si(C) superlattice structures. II. High resolution reconstruction using neural network root finder technique;Journal of Applied Physics;2006-06
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