Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation;Semiconductor Science and Technology;2021-08-20
2. Temperature dependent gas sensor model for Schottky diode based on InAlN/GaN heterostructure;ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2020): 5th National e-Conference on Advanced Materials and Radiation Physics;2021
3. Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode;Journal of Electrical Engineering;2018-09-01
4. Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode;AIP Conference Proceedings;2015
5. Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility;Electronic Materials Letters;2014-11
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