Temperature dependent gas sensor model for Schottky diode based on InAlN/GaN heterostructure
Author:
Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0053310
Reference14 articles.
1. Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)
2. Botulinum toxin detection using AlGaN∕GaN high electron mobility transistors
3. Comprehensive investigation on planar type of Pd–GaN hydrogen sensors
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5. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study the Sensing Performance with Catalytic Metals of Passivated InAlN/GaN Schottky Diode Gas Sensor;2022 IEEE VLSI Device Circuit and System (VLSI DCS);2022-02-26
2. Recent progress on group III nitride nanostructure-based gas sensors;Journal of Materials Chemistry C;2022
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