Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode
Author:
Affiliation:
1. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology , Slovak University of Technology , Ilkovičova 3, 812 19 Bratislava , Slovakia
2. III-V Lab , route de Nozay, 91460 Marcoussis , France
Abstract
Publisher
Walter de Gruyter GmbH
Link
https://www.sciendo.com/pdf/10.2478/jee-2018-0057
Reference18 articles.
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2. [2] A. Nigam, T. N. Bhat, S. Rajamani, S. B. Dolmanan, S. Tripathy and M. Kumar, “Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate”,, AIP Advances 7, pp.85015, 2017.
3. [3] M. K. Chattopadhyay and S. Tokekar, “Thermal model for dc characteristics of Algan/Gan HEMTs including self-heating effect and non-linear polarization”, Microelectronics Journal, 39, pp.1181-1188, 2008.
4. [4] S. Chowdhury, “Gallium nitride based power switches for next generation of power conversion”, Phys. Stat. Sol. (A), vol.212, iss.5, pp.1066-1074, 2015.
5. [5] F. Berthet, Y. Guhel, H. Gualous, B.Boudart, J.-L. Trolet, M. Piccione and C. Gaqui?re, “Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy”, Microel. Rel., vol.51, pp.1796-1800, 2011.
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