Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode-Reference-Cited by-同舟云学术

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Published:2018-09-01 Issue:5 Volume:69 Page:390-394
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Florovič Martin¹,Szobolovszký Róbert¹,Kováč Jaroslav¹,Kováč Jaroslav¹,Chvála Aleš¹,Jacquet Jean-Claude²,Delage Sylvain Laurent²

Affiliation:

1. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology , Slovak University of Technology , Ilkovičova 3, 812 19 Bratislava , Slovakia

2. III-V Lab , route de Nozay, 91460 Marcoussis , France

Abstract

Abstract GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2018-0057

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