Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3452331
Reference39 articles.
1. The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
2. A ferroelectric-piezoelectric random access memory
3. Materials and production characterization requirements for the production of FRAM® memory products
4. A new solid state memory resistor
5. Ferroelectric field‐effect memory device using Bi4Ti3O12film
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