The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2014935
Reference23 articles.
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2. Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
3. Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal–ferroelectric–insulator–semiconductor structure
4. Applications of Ferroelectrics, Proceedings of the 12th IEEE International Symposium;Park J. D.,2000
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