Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal–ferroelectric–insulator–semiconductor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1400764
Reference11 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. Pulsed laser deposition and ferroelectric characterization of bismuth titanate films
3. An Improvement inC–VCharacteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
4. Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)
5. Epitaxial BaTiO3 films on silicon for MFSFET applications
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1. Effect of annealing temperature on electrical properties of metal–ferroelectric (BiFeO3)–insulator (Bi2Ti2O7)–silicon capacitors;Microelectronic Engineering;2012-03
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3. Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates;Journal of Alloys and Compounds;2010-10
4. The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors;Electrochemical and Solid-State Letters;2010
5. Structural and electrical properties of K0.5Bi0.5TiO3thin films for ferroelectric field effect transistor applications;Journal of Physics D: Applied Physics;2009-01-30
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