Fabrication Strategies of Metal–Ferroelectric–Insulator–Silicon Gate Stacks Using Ferroelectric Hf–Zr–O and High-k HfO<sub>2</sub> Insulator Layers for Securing Robust Ferroelectric Memory Characteristics-Reference-Cited by-同舟云学术

Fabrication Strategies of Metal–Ferroelectric–Insulator–Silicon Gate Stacks Using Ferroelectric Hf–Zr–O and High-k HfO₂ Insulator Layers for Securing Robust Ferroelectric Memory Characteristics

Published:2022-05-23 Issue:6 Volume:4 Page:2953-2963
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Jin-Ju¹,Moon Seung-Eon²,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea

2. Emerging Nano-Materials Research Section, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Electronics and Telecommunications Research Institute

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00402

Reference63 articles.

1. Ferroelectric field-effect transistors based on HfO2: a review

2. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

3. Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

4. Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

5. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

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