Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers-Reference-Cited by-同舟云学术

Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers

Published:2019-05-07 Issue:17 Volume:125 Page:175701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Giulotto E.¹^ORCID,Geddo M.¹^ORCID,Patrini M.¹^ORCID,Guizzetti G.¹^ORCID,Sharma M. S.²,Capizzi M.²^ORCID,Polimeni A.²,Pettinari G.³,Rubini S.⁴,Felici M.²^ORCID

Affiliation:

1. Dipartimento di Fisica, Università degli Studi di Pavia, Via Bassi 6, I-27100 Pavia, Italy

2. Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 2, I-00185 Roma, Italy

3. National Research Council, Institute for Photonics and Nanotechnologies, Via Cineto Romano 42, I-00156 Roma, Italy

4. IOM-CNR Laboratorio TASC, SS14, Km. 163.5, 34149 Trieste, Italy

Funder

Sapienza Università di Roma

Horizon 2020 Framework Programme

Regione Lazio

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093809

Reference37 articles.

1. Theory of electronic structure evolution in GaAsN and GaPN alloys

2. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys

3. Hydrogenated Dilute Nitride Semiconductors

4. Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review

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