High‐speed photodetectors on InGaAs/GaAs‐on‐GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347403
Reference16 articles.
1. High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates
2. Planar monolithic integrated photoreceiver for 1.3–1.55 μm wavelength applications using GaInAs‐GaAs heteroepitaxies
3. InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy
4. A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications
5. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
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