Planar monolithic integrated photoreceiver for 1.3–1.55 μm wavelength applications using GaInAs‐GaAs heteroepitaxies
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97175
Reference7 articles.
1. Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy
2. Planar monolithic integration of a photodiode and a GaAs preamplifier
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4. Planar InGaAs/InP PINFET fabricated by Be ion implantation
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1. Interfacial Chemistry of InP/GaAs Bonded Pairs;Journal of Electronic Materials;2007-03-30
2. Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes;Journal of Lightwave Technology;2002-03
3. 10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs;Electronics Letters;1997
4. High‐speed photodetectors on InGaAs/GaAs‐on‐GaAs superlattices;Journal of Applied Physics;1991-06-15
5. Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates;IEEE Electron Device Letters;1991-06
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