InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy-Reference-Cited by-同舟云学术

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InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy

Published:1987-01-02 Issue:1 Volume:23 Page:38-39
ISSN:1350-911X
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Dental A.G.,Campbell J.C.,Joyner C.H.,Qua G.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19870028?crawler=true&mimetype=application/pdf

Reference2 articles.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A long-wavelength pin–fet receiver oeic on GaAs substrate;Gallium Arsenide and Related Compounds 1991;2020-11-25

2. Metamorphic growth of tensile strained GaInP on GaAs substrate;Journal of Crystal Growth;2010-10

3. 10 GHz high-speed optical interconnection;Electronics Letters;2010

4. Long-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates;Applied Physics Letters;2005-09-19

5. InGaAs/InP pin photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy;Electronics Letters;1997

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