Influence of proton‐stripe realization process on the luminescence properties of (AlGa)As double heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327401
Reference25 articles.
1. Heterostructure injection lasers
2. Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
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4. Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodes
5. Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Identification of hydrogen platelets in proton‐bombarded GaAs;Journal of Applied Physics;1986-08
2. The nature of dislocation sources in proton bombarded GaAs;Radiation Effects;1983-01
3. Photoluminescence of proton‐bombarded and annealed GaAs;Journal of Applied Physics;1981-11
4. Void formation in annealed proton‐bombarded GaAs;Applied Physics Letters;1981-08
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