The nature of dislocation sources in proton bombarded GaAs
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448308209656
Reference13 articles.
1. Hemment, P. L. F. 1975.Applications of Ion Beams to Materials44 (Inst. Phys. Conf. London) Ser. No. 28
2. Impurity‐peak formation during proton‐enhanced diffusion of phosphorus and boron in silicon
3. Redistribution of boron in silicon after high−temperature proton irradiation
4. Nonradiative recombination in GaAlAs proton-bombarded stripe-geometry lasers
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1. Defects and ion redistribution in implant‐isolated GaAs‐based device structures;Journal of Applied Physics;1993-12
2. Hydrogen and the Mechanical Properties of Semiconductors;Hydrogen in Crystalline Semiconductors;1992
3. The formation of microsplits and damage rafts in proton-bombarded GaAs;Journal of Materials Science;1988-08
4. Analysis of transmission electron microscopy images of hydrogen platelets in proton‐bombarded GaAs;Journal of Applied Physics;1988-02
5. Dopant-type effects on the diffusion of deuterium in GaAs;Physical Review B;1987-09-15
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