Detection and origins of crystal defects in GaAs/GaAlAs LPE layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.322437
Reference15 articles.
1. Degradation of CW GaAs double-heterojunction lasers at 300 K
2. Defect structure introduced during operation of heterojunction GaAs lasers
3. Defect structure of degraded heterojunction GaAlAs−GaAs lasers
4. The liquid phase epitaxy of AlxGa1-xAs for monolithic planar structures
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1. Chapter 6 Light-Emitting-Diode Reliability;Semiconductors and Semimetals;1985
2. Photochemical etching of laser‐induced defects in (Al,Ga)As heterostructures;Applied Physics Letters;1984-08-15
3. Applications Of Semiconductor Lasers In Space Communications;Optical Engineering;1983-04-01
4. Degradation Processes in Semiconductor Lasers;Physica Scripta;1981-08-01
5. Influence of proton‐stripe realization process on the luminescence properties of (AlGa)As double heterostructures;Journal of Applied Physics;1980-01
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