Damage saturation during high‐energy ion implantation of Si1−xGex
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107989
Reference11 articles.
1. Oxygen Implanted Layers in Silicon Electrical and Microstructural Characterization
2. Carrier Lifetime Reduction by Argon Implantation into Silicon
3. Minority carrier lifetime in silicon after Ar+ and Si+ implantation
4. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations
5. Electronic defects in silicon induced by MeV carbon and oxygen implantations
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1. Dynamic annealing in Ge studied by pulsed ion beams;Scientific Reports;2017-10-13
2. Displacement Damage in Group IV Semiconductor Materials;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
3. Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications;Journal of Electronic Materials;1998-05
4. Compositional effects on the radiation damage of 2 MeV Si ion implanted relaxed Si1−xGex alloys;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
5. Lattice Damage of Relaxed Si1-xGex Alloys of Various Composition Implanted with 2 MeV Si Ions;Materials Science Forum;1997-05
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