Author:
Wallace J. B.,Bayu Aji L. B.,Shao L.,Kucheyev S. O.
Publisher
Springer Science and Business Media LLC
Reference36 articles.
1. Pillarisetty, R. Academic and industry research progress in germanium nanodevices. Nature 479, 324 (2011).
2. Decoster, S. et al. Transition metal impurities on the bond-centered site in germanium. Phys. Rev. Lett. 102, 065502 (2009).
3. Decoster, S. & Vantomme, A. Implantation-induced damage in Ge: strain and disorder profiles during defect accumulation and recovery. J. Phys. D. Appl. Phys. 42, 165404 (2009).
4. Koffel, S., Scheiblin, P., Claverie, A. & Benassayag, G. Amorphization kinetics of germanium during ion implantation. J. Appl. Phys. 105, 013528 (2009).
5. Kucheyev, S. O., Bradby, J. E., Ruffell, S., Li, C. P., Felter, T. E. & Hamza, A. V. Segregation and precipitation of Er in Ge. Appl. Phys. Lett. 90, 221901 (2007).
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献