Temperature dependence of the tunneling current in metal-oxide-semiconductor devices due to the coupling between the longitudinal and transverse components of the electron thermal energy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2735929
Reference13 articles.
1. Temperature dependence of Fowler-Nordheim injection from accumulated n-type silicon into silicon dioxide
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3. Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide
4. Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination
5. Si–SiO2 barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide
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