Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1288169
Reference13 articles.
1. Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
2. 1.5 nm direct-tunneling gate oxide Si MOSFET's
3. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
4. Submicron transferred-substrate heterojunction bipolar transistors
5. Polarity dependent gate tunneling currents in dual-gate CMOSFETs
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1. Temperature dependence of the tunneling current in metal-oxide-semiconductor devices due to the coupling between the longitudinal and transverse components of the electron thermal energy;Applied Physics Letters;2007-04-30
2. Modelling negative bias temperature instabilities in advanced p-MOSFETs;Microelectronics Reliability;2005-01
3. Modeling negative bias temperature instabilities in hole channel metal–oxide–semiconductor field effect transistors with ultrathin gate oxide layers;Journal of Applied Physics;2004-03
4. Negative Bias Temperature Instabilities in SiO[sub 2]/HfO[sub 2]-Based Hole Channel FETs;Journal of The Electrochemical Society;2004
5. Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks;Applied Physics Letters;2002-03-18
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