Temperature dependence of the threshold current density in InP‐Ga0.28In0.72As0.6P0.4(λ=1.3 μm) double heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334226
Reference67 articles.
1. In1-xGaxAsyP1-y/InP DH lasers fabricated on InP
2. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers
3. The temperature dependence of threshold current for double‐heterojunction lasers
4. Theoretical and experimental study of threshold characteristics in InGaAsP/InP DH lasers
5. Temperature dependence of InGaAsP double-heterostructure laser characteristics
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