Growth of single‐crystal columns of CoSi2embedded in epitaxial Si on Si(111) by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102383
Reference10 articles.
1. Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2on Si (111)
2. Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)
3. Control of epitaxial orientation of Si on CoSi2(111)
4. Growth of single‐crystal CoSi2on Si(111)
5. Mesotaxy: Single‐crystal growth of buried CoSi2layers
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1. Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process;Japanese Journal of Applied Physics;1995-09-15
2. Planar to columnar transformation of PtSi in the epitaxial growth process of Si/PtSi/Si(111) double heterostructures;Journal of Applied Physics;1994-03-15
3. Planar to columnar structure transition of MBE grown Si/PtSi/Si(111) double heterostructure;Control of Semiconductor Interfaces;1994
4. Allotaxial growth of epitaxial Si/FeSi2/Si heterostructures;Applied Surface Science;1993-11
5. Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon;Applied Physics Letters;1993-04-12
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