Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Growth of single‐crystal CoSi2on Si(111)
2. Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy
3. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
4. Formation of Uniform Solid-Phase Epitaxial CoSi2Films by Patterning Method
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1. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal;Applied Physics Letters;2012-02-06
2. Structural study of a commensurate phase at Co/Si(111) interface using in situ surface x-ray scattering;Applied Physics Letters;2002-10-07
3. A new type of size effect in the conductivity of quantized metal films;Journal of Physics: Condensed Matter;2002-04-18
4. Surface roughness and size effects in quantized films;Physical Review B;2002-03-29
5. Growth of CoSi2 films on Si (100) substrates by a two-step method;Thin Solid Films;2000-10
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