Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure
Author:
Affiliation:
1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
Funder
863 Program
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4901530
Reference35 articles.
1. Memristive devices for computing
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