Intrinsic memristive mechanisms in 2D layered materials for high-performance memory-Reference-Cited by-同舟云学术

Intrinsic memristive mechanisms in 2D layered materials for high-performance memory

Published:2021-02-07 Issue:5 Volume:129 Page:050902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Hao¹^ORCID,Tao Li¹^ORCID,Xu Jian-Bin¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, People's Republic of China

Funder

CUHK Group Research Scheme

CUHK Postdoctoral Fellowship

Innovation and Technology Commission, Hong Kong SAR Goverment

Research Grants Council of Hong Kong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035764

Reference119 articles.

1. Neuromorphic nanoelectronic materials

2. Resistive switching materials for information processing

3. Overview of emerging nonvolatile memory technologies

4. Artificial synapses based on nanomaterials

5. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

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