Improving HfO2-Based Resistive Switching Devices by Inserting a TaOx Thin Film via Engineered In Situ Oxidation-Reference-Cited by-同舟云学术

Improving HfO₂-Based Resistive Switching Devices by Inserting a TaO_x Thin Film via Engineered In Situ Oxidation

Published:2022-05-18 Issue:21 Volume:14 Page:24565-24574
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Tao¹,Brivio Stefano²,Cianci Elena²^ORCID,Wiemer Claudia²,Perego Michele²^ORCID,Spiga Sabina²^ORCID,Lanza Mario³^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science & Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China

2. CNR - IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza 20864, Italy

3. King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funder

State Administration of Foreign Experts Affairs

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

National Science and Technology Major Project

Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices

Suzhou Science and Technology Bureau

Collaborative Innovation Centre of Suzhou Nano Science & Technology

Ministry of Finance of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c03364

Reference42 articles.

1. Memristive devices for computing

2. A review on memristive devices and applications

3. Brain-inspired computing via memory device physics

4. Metal–Oxide RRAM

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