Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119733
Reference8 articles.
1. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
2. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
3. P-Type ZnSe:N Prepared by Electron Cyclotron Resonance Radical Beam Doping during Molecular Beam Epitaxial Growth
4. Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular‐beam epitaxy
5. Characterization Of Nitrogen Species For P-Type Doping Of Znse
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1. Resonant donor defect as a cause of compensation inp-type ZnSe: Photoluminescence studies under hydrostatic pressure;Physical Review B;2001-04-05
2. Magneto-Optical Characterization of the Nitrogen-Related Impurities in p-Type ZnSe Epilayers;physica status solidi (a);2000-07
3. Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators;Journal of Crystal Growth;2000-06
4. ZnSe-based heterostructures for blue-green lasers;Comptes Rendus de l'Académie des Sciences - Series IV - Physics;2000-03
5. The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials;Applied Physics Letters;1999-08-30
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