Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110878
Reference13 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
3. Blue‐green laser diodes
4. Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells
5. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
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1. Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1−y, and p-type Zn1−xMgxSySe1−y epitaxial films grown on GaAs (100) substrates;Applied Surface Science;2009-02
2. Spin-flip Raman scattering studies of ZnSe bulk crystals doped with antimony;Semiconductor Science and Technology;2003-08-11
3. ZnSe:N Epilayers Grown by Low-Pressure Metalorganic Chemical Vapor Deposition Using a Radio Frequency Plasma Source;physica status solidi (b);2002-01
4. Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers;Physical Review B;2000-11-15
5. Spin-flip Raman scattering studies of II–VI heterostructures;Journal of Crystal Growth;2000-06
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