The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124655
Reference17 articles.
1. Wide bandgap light-emitting devices materials and doping problems
2. Decay Dynamics in Disordered Systems: Application to Heavily Doped Semiconductors
3. Intensity‐dependent energy and line shape variation of donor–acceptor‐pair bands in ZnSe:N at different compensation levels
4. Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide
5. Quasi‐donor‐acceptor pair photoluminescence emission in GaxIn1−xAs/InP
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