Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366716
Reference34 articles.
1. Thin films and devices of diamond, silicon carbide and gallium nitride
2. GaN, AlN, and InN: A review
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4. Exciton fine structure in undoped GaN epitaxial films
5. Free and bound excitons in thin wurtzite GaN layers on sapphire
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1. Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films;Nanomaterials;2023-10-31
2. Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition;Materials Research;2019
3. Cathodoluminescence and depth profiling studies of unintentionally doped GaN films grown by MOVPE;Materials Research Express;2015-10-27
4. Photoluminescence of n-type GaN film in an argon plasma;Philosophical Magazine Letters;2014-03-04
5. Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20;Applied Physics Letters;2009-09-28
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