Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3072698
Reference19 articles.
1. CMOS scaling into the nanometer regime
2. Novel dual-metal gate technology using Mo-MoSi/sub x/ combination
3. Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS
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