Raman studies of nitrogen incorporation in GaAs1−xNx
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121959
Reference21 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Bowing parameter of the band-gap energy of GaNxAs1−x
4. Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy
5. Luminescence of as-grown and thermally annealed GaAsN/GaAs
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